Sottostrat
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Dia150mm 4H-N 6inch SiC substrat Produzzjoni u grad finta
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6inch SiC Epitaxiy wejfer N/P tip jaċċettaw personalizzat
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3inch Dia76.2mm wejfer taż-żaffir 0.5mm ħxuna C-pjan SSP
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6inch N-Type jew P-tip Wejfer tas-silikon CZ Si wejfer
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4inch SiC Epi wejfer għal MOS jew SBD
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SiO2 Thin Film Ossidu Termali Wejfer tas-silikon 4inch 6inch 8inch 12inch
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2inch SiC ingott Dia50.8mmx10mmt 4H-N monokristall
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Sostrat tas-silikonju fuq iżolatur wejfer SOI tliet saffi għall-Mikroelettronika u l-Frekwenza tar-Radju
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Wafers tas-SiC ta' 4 pulzieri 6H Sottostrati SiC semi-iżolanti prim, riċerka, u grad finta
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6inch HPSI SiC substrat wejfer tas-silikonju karbur Semi-insulting wejfers SiC
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4inch Wejfers SiC semi-insultanti HPSI SiC substrate Prim Grad ta 'Produzzjoni
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3inch 76.2mm 4H-Semi SiC wejfer tas-sottostrat Carbur tas-silikon Wejfers SiC semi-insultanti