SiC
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SiC Ingot 4H-N tip Dummy grad 2inch 3inch 4inch 6inch ħxuna:> 10mm
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200mm SiC substrat finta grad 4H-N 8inch wejfer SiC
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4H-N Dia205mm SiC żerriegħa miċ-Ċina P u D grad Monocrystaline
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6inch SiC Epitaxiy wejfer N/P tip jaċċettaw personalizzat
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Dia150mm 4H-N 6inch SiC substrat Produzzjoni u grad finta
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4inch SiC Epi wejfer għal MOS jew SBD
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2inch SiC ingott Dia50.8mmx10mmt 4H-N monokristall
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Wafers tas-SiC ta' 4 pulzieri 6H Sottostrati SiC semi-iżolanti prim, riċerka, u grad finta
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6inch HPSI SiC substrat wejfer tas-silikonju karbur Semi-insulting wejfers SiC
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4inch Wejfers SiC semi-insultanti HPSI SiC substrate Prim Grad ta 'Produzzjoni
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3inch 76.2mm 4H-Semi SiC wejfer tas-sottostrat Carbur tas-silikon Wejfers SiC semi-insultanti
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3inch Dia76.2mm SiC substrati HPSI Prime Research u Dummy grade