SiC
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SiC substrat Dia200mm 4H-N u HPSI Karbur tas-silikon
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3inch SiC substrat Produzzjoni Dia76.2mm 4H-N
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SiC sottostrat P u D grad Dia50mm 4H-N 2inch
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4H-N/6H-N SiC Wafer Reasearch produzzjoni Dummy grad Dia150mm Substrat tal-karbur tas-silikon
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2inch SiC ingott Dia50.8mmx10mmt 4H-N monokristall
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200mm SiC substrat finta grad 4H-N 8inch wejfer SiC
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4H-N Dia205mm SiC żerriegħa miċ-Ċina P u D grad Monocrystaline
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6inch SiC Epitaxiy wejfer N/P tip jaċċettaw personalizzat
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Dia150mm 4H-N 6inch SiC substrat Produzzjoni u grad finta
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4inch SiC Epi wejfer għal MOS jew SBD
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Wafers tas-SiC ta' 4 pulzieri 6H Sottostrati SiC semi-iżolanti prim, riċerka, u grad finta
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6inch HPSI SiC substrate wejfer tas-silikonju karbur Semi-insulting wejfers SiC