Prodotti
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4h-n 8 pulzieri sic substrat wejfer silicon carbide riċerka finta grad 500um ħxuna
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4H-N / 6H-N SIC WAFER REASEARCH Produzzjoni Dummy Grad Dia150mm Silicon Carbide Substrat
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8inch 200mm Silicon Carbide Sic Wejfers 4H-N Type Production Grad 500um Ħxuna
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DIA300x1.0mmt Ħxuna Żaffir tal-wejfer C-Plane SSP / DSP
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8 pulzier 200mm Sapphire Substrat Sapphire Wafer Threadness 1SP 2SP 0.5mm 0.75mm
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Hpsi sic wejfer dia: 3inch ħxuna: 350um ± 25 µm għall-elettronika tal-qawwa
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8 pulzieri sic silicon carbide wejfer 4h-n tip 0.5mm grad ta 'grad ta' grad ta 'grad ta' sottostrat illustrat apposta
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Crystal Uniku AL2O3 99.999% DIA200mm Sapphire Wejfers 1.0mm 0.75mm ħxuna
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156mm 159mm 6 pulzier żaffir wejfer għal carrierc-pjan dsp ttv
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Assi C / A / M 4 pulzier Sapphire Wejfers Crystal Uniku Al2O3, SSP DSP Hardness High Sapphire Substrat
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3inch Purità Għolja Semi-Insulating （HPSI） Sic Wafer 350um Grad Dummy Grad Prim
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P-TIP TA 'SUBSTAT SUSTRAT SIC SIC DIA2INCH Prodott Ġdid